C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations

Yifan He, Yuxuan Huang, Jinshan Yue, Wenyu Sun, Lu Zhang, Yongpan Liu. C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations. In IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022. pages 3279-3283, IEEE, 2022. [doi]

Abstract

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