C. Y. He, K. H. Tang, T. S. Chen, K. Y. Chang, C. H. Lin, K. Sato, S. J. Jou, P. H. Chen, H. M. Chen, B. D. Rong, K. Itoh. Sub-ns Access Sub-mW/GHz 32 Kb SRAM with 0.45 V Cross-Point-5T Cell and Built-in Y_ Line. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2019, Macau, SAR, China, November 4-6, 2019. pages 227-230, IEEE, 2019. [doi]
Abstract is missing.