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Device modelling of bendable MOS transistors

Hadi Heidari, William Taube Navaraj, Gergely Toldi, Ravinder Dahiya. Device modelling of bendable MOS transistors. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 1358-1361, IEEE, 2016. [doi]

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