Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches

Clemens Heitzinger, Wolfgang Pyka, Naoki Tamaoki, Toshiro Takase, Toshimitsu Ohmine, Siegfried Selberherr. Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Trans. on CAD of Integrated Circuits and Systems, 22(3):285-292, 2003. [doi]

Abstract

Abstract is missing.