Time-domain writing architecture for multilevel RRAM cells resilient to temperature and process variations

Amadeo de Gracia Herranz, Marisa López-Vallejo. Time-domain writing architecture for multilevel RRAM cells resilient to temperature and process variations. Integration, 75:141-149, 2020. [doi]

@article{HerranzL20,
  title = {Time-domain writing architecture for multilevel RRAM cells resilient to temperature and process variations},
  author = {Amadeo de Gracia Herranz and Marisa López-Vallejo},
  year = {2020},
  doi = {10.1016/j.vlsi.2020.07.001},
  url = {https://doi.org/10.1016/j.vlsi.2020.07.001},
  researchr = {https://researchr.org/publication/HerranzL20},
  cites = {0},
  citedby = {0},
  journal = {Integration},
  volume = {75},
  pages = {141-149},
}