Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates

L. Heuken, Muhammad Alshahed, A. Ottaviani, M. Alomari, Joachim N. Burghartz, U. Waizmann, T. Reindl. Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 22-25, IEEE, 2018. [doi]

Abstract

Abstract is missing.