Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors - researchr publication authors

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Masashi Higashino, Hitoshi Aoki, Nobukazu Tsukiji, Masaki Kazumi, Takuya Totsuka, Haruo Kobayashi. Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-4, IEEE, 2015. [doi]

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