Masashi Higashino, Hitoshi Aoki, Nobukazu Tsukiji, Masaki Kazumi, Takuya Totsuka, Haruo Kobayashi. Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-4, IEEE, 2015. [doi]
@inproceedings{HigashinoATKTK15,
title = {Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors},
author = {Masashi Higashino and Hitoshi Aoki and Nobukazu Tsukiji and Masaki Kazumi and Takuya Totsuka and Haruo Kobayashi},
year = {2015},
doi = {10.1109/ASICON.2015.7516945},
url = {https://doi.org/10.1109/ASICON.2015.7516945},
researchr = {https://researchr.org/publication/HigashinoATKTK15},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015},
publisher = {IEEE},
isbn = {978-1-4799-8485-5},
}