Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs - researchr publication authors

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Toshiro Hiramoto, Anil Kumar, Tomoko Mizutani, Jun Nishimura, Takuya Saraya. Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs. In Rakesh Patel, Tom Andre, Aurangzeb Khan, editors, 2011 IEEE Custom Integrated Circuits Conference, CICC 2011, San Jose, CA, USA, Sept. 19-21, 2011. pages 1-4, IEEE, 2011. [doi]

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