Daniel Hofstetter, Esther Baumann, Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George, Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy, Fabien Guillot, Eva Monroy. Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. Proceedings of the IEEE, 98(7):1234-1248, 2010. [doi]
@article{HofstetterBGTWSDGERKGM10,
title = {Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures},
author = {Daniel Hofstetter and Esther Baumann and Fabrizio Raphael Giorgetta and Ricardo Théron and Hong Wu and William J. Schaff and Jahan Dawlaty and Paul A. George and Lester F. Eastman and Farhan Rana and Prem K. Kandaswamy and Fabien Guillot and Eva Monroy},
year = {2010},
doi = {10.1109/JPROC.2009.2035465},
url = {http://dx.doi.org/10.1109/JPROC.2009.2035465},
researchr = {https://researchr.org/publication/HofstetterBGTWSDGERKGM10},
cites = {0},
citedby = {0},
journal = {Proceedings of the IEEE},
volume = {98},
number = {7},
pages = {1234-1248},
}