A 28nm 36kb high speed 6T SRAM with source follower PMOS read and bit-line under-drive

Chi-Hao Hong, Yi-Wei Chiu, Jun-Kai Zhao, Shyh-Jye Jou, Wen-Tai Wang, Reed Lee. A 28nm 36kb high speed 6T SRAM with source follower PMOS read and bit-line under-drive. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015. pages 2549-2552, IEEE, 2015. [doi]

Abstract

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