K.-Y. Hsiang, J. Y. Lee, F. S. Chang, Z.-F. Lou, Z. X. Li, Z.-H. Li, J. H. Chen, C. W. Liu, T.-H. Hou, M. H. Lee. FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
Abstract is missing.