Improvement of TDDB reliability, characteristics of HfO::2:: high-k/metal gate MOSFET device with oxygen post deposition annealing - researchr publication authors

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Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, Feng-Renn Juang, Chien Ting Lin, Chieh-Ming Lai. Improvement of TDDB reliability, characteristics of HfO::2:: high-k/metal gate MOSFET device with oxygen post deposition annealing. Microelectronics Reliability, 50(5):618-621, 2010. [doi]

This author has not been identified. Look up 'Chia-Wei Hsu' in GoogleThis author has not been identified. Look up 'Yean-Kuen Fang' in GoogleThis author has not been identified. Look up 'Wen-Kuan Yeh' in GoogleThis author has not been identified. Look up 'Chun-Yu Chen' in GoogleThis author has not been identified. Look up 'Yen-Ting Chiang' in GoogleThis author has not been identified. Look up 'Feng-Renn Juang' in GoogleThis author has not been identified. Look up 'Chien Ting Lin' in GoogleThis author has not been identified. Look up 'Chieh-Ming Lai' in Google

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