Improvement of TDDB reliability, characteristics of HfO::2:: high-k/metal gate MOSFET device with oxygen post deposition annealing

Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, Feng-Renn Juang, Chien Ting Lin, Chieh-Ming Lai. Improvement of TDDB reliability, characteristics of HfO::2:: high-k/metal gate MOSFET device with oxygen post deposition annealing. Microelectronics Reliability, 50(5):618-621, 2010. [doi]

Abstract

Abstract is missing.