Dummy-Gate Structure to Improve ESD Robustness in a Fully-Salicided 130-nm CMOS Technology without Using Extra Salicide-Blocking Mask - researchr publication

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Hsin-Chyh Hsu, Ming-Dou Ker. Dummy-Gate Structure to Improve ESD Robustness in a Fully-Salicided 130-nm CMOS Technology without Using Extra Salicide-Blocking Mask. In 7th International Symposium on Quality of Electronic Design (ISQED 2006), 27-29 March 2006, San Jose, CA, USA. pages 503-506, IEEE Computer Society, 2006. [doi]

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