Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells - researchr publication authors

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Vita Pi-Ho Hu, Ming-Long Fan, Pin Su, Ching-Te Chuang. Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells. In IEEE International Symposium on Circuits and Systemss, ISCAS 2014, Melbourne, Victoria, Australia, June 1-5, 2014. pages 1122-1125, IEEE, 2014. [doi]

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