G. Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, A. Annunziata, S. Brown, W. Chen, Y.-H. Kim, N. Marchack, S. Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge. Low-current Spin Transfer Torque MRAM. In 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Hsinchu, Taiwan, April 24-27, 2017. pages 1-2, IEEE, 2017. [doi]
@inproceedings{HuNLLSHABCKMMKO17,
title = {Low-current Spin Transfer Torque MRAM},
author = {G. Hu and J. J. Nowak and G. Lauer and J. H. Lee and J. Z. Sun and J. Harms and A. Annunziata and S. Brown and W. Chen and Y.-H. Kim and N. Marchack and S. Murthy and Chandrasekharan Kothandaraman and Eugene J. O'Sullivan and J. H. Park and M. Reuter and R. P. Robertazzi and Philip Louis Trouilloud and Y. Zhu and Daniel Christopher Worledge},
year = {2017},
doi = {10.1109/VLSI-DAT.2017.7939701},
url = {https://doi.org/10.1109/VLSI-DAT.2017.7939701},
researchr = {https://researchr.org/publication/HuNLLSHABCKMMKO17},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Hsinchu, Taiwan, April 24-27, 2017},
publisher = {IEEE},
isbn = {978-1-5090-3969-2},
}