The following publications are possibly variants of this publication:
- Spin-Transfer-Torque MRAM: the Next Revolution in MemoryDaniel C. Worledge. imw2 2022: 1-4 [doi]
- Commercialization of 1Gb Standalone Spin-Transfer Torque MRAMJ. J. Sun, M. DeHerrera, B. Hughes, S. Ikegawa, H. K. Lee, Fred B. Mancoff, K. Nagel, G. Shimon, Syed M. Alam, D. Houssameddine, S. Aggarwal. imw2 2021: 1-4 [doi]
- A survey of in-spin transfer torque MRAM computingHao Cai, Bo Liu 0019, Juntong Chen, Lirida A. B. Naviner, Yongliang Zhou, Zhen Wang 0019, Jun Yang 0006. chinaf, 64(6), 2021. [doi]
- Write-error-rate of Spin-Transfer-Torque MRAM (Invited)Daniel C. Worledge. irps 2023: 1-4 [doi]
- Variation-Tolerant Sensing Circuit for Spin-Transfer Torque MRAMKyungmin Kim, Changsik Yoo. tcas, 62-II(12):1134-1138, 2015. [doi]
- Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cellsXuanyao Fong, Yusung Kim, Sri Harsha Choday, Kaushik Roy. tvlsi, 22(2):384-395, 2014. [doi]
- Spin-transfer torque magnetic random access memory (STT-MRAM)Dmytro Apalkov, Alexey Khvalkovskiy, Steven Watts, Vladimir Nikitin, Xueti Tang, Daniel Lottis, Kiseok Moon, Xiao Luo, Eugene Chen, Adrian Ong, Alexander Driskill-Smith, Mohamad Krounbi. jetc, 9(2):13, 2013. [doi]