G. Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, A. Annunziata, S. Brown, W. Chen, Y.-H. Kim, N. Marchack, S. Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge. Low-current Spin Transfer Torque MRAM. In 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Hsinchu, Taiwan, April 24-27, 2017. pages 1-2, IEEE, 2017. [doi]
Abstract is missing.