An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires

Ya-Chi Huang, Meng-Hsueh Chiang, Shui-Jinn Wang, Sumeet Kumar Gupta. An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires. In 2018 International Conference on IC Design & Technology, ICICDT 2018, Otranto, Italy, June 4-6, 2018. pages 117-120, IEEE, 2018. [doi]

@inproceedings{HuangCWG18,
  title = {An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires},
  author = {Ya-Chi Huang and Meng-Hsueh Chiang and Shui-Jinn Wang and Sumeet Kumar Gupta},
  year = {2018},
  doi = {10.1109/ICICDT.2018.8399770},
  url = {https://doi.org/10.1109/ICICDT.2018.8399770},
  researchr = {https://researchr.org/publication/HuangCWG18},
  cites = {0},
  citedby = {0},
  pages = {117-120},
  booktitle = {2018 International Conference on IC Design & Technology, ICICDT 2018, Otranto, Italy, June 4-6, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-2550-7},
}