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Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors

D.-S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y.-S. Huang, C. K. Lin, Ryan Lu, Jun He. Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

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D.-S. Huang

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J. H. Lee

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Y. S. Tsai

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Y. F. Wang

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Y.-S. Huang

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C. K. Lin

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Ryan Lu

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Jun He

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