A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology

Shangyao Huang, Xianfeng Que, Yanjie Wang. A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology. IEICE Electronic Express, 21(2):20230493, 2024. [doi]

Abstract

Abstract is missing.