A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation

Meng Huang, Shufang Si, Zheng He, Ying Zhou, Sijia Li, Hong Wang, Jinying Liu, Dongsheng Xie, Mengmeng Yang, Kang You, Chris Choi, Yi Tang, Xiaojie Li, Shibing Qian, Xiaodong Yang, Long Hou, Weiping Bai, Zhongming Liu, Yanzhe Tang, Qiong Wu, Yanqin Wang, Tao Dou, Jake Kim, Guilei Wang, Jie Baisp, Adachi Takao, Chao Zhao, Abraham Yoo. A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]

@inproceedings{HuangSHZLWLXYYC23,
  title = {A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation},
  author = {Meng Huang and Shufang Si and Zheng He and Ying Zhou and Sijia Li and Hong Wang and Jinying Liu and Dongsheng Xie and Mengmeng Yang and Kang You and Chris Choi and Yi Tang and Xiaojie Li and Shibing Qian and Xiaodong Yang and Long Hou and Weiping Bai and Zhongming Liu and Yanzhe Tang and Qiong Wu and Yanqin Wang and Tao Dou and Jake Kim and Guilei Wang and Jie Baisp and Adachi Takao and Chao Zhao and Abraham Yoo},
  year = {2023},
  doi = {10.1109/IMW56887.2023.10145931},
  url = {https://doi.org/10.1109/IMW56887.2023.10145931},
  researchr = {https://researchr.org/publication/HuangSHZLWLXYYC23},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-7459-7},
}