Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling

Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, LiangLiang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang. Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. In Rakesh Patel, Tom Andre, Aurangzeb Khan, editors, 2011 IEEE Custom Integrated Circuits Conference, CICC 2011, San Jose, CA, USA, Sept. 19-21, 2011. pages 1-8, IEEE, 2011. [doi]

Abstract

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