A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric - researchr publication authors

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Y. Huang, J. P. Xu, L. S. Wang, S. Y. Zhu. A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric. Microelectronics Reliability, 55(2):342-346, 2015. [doi]

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