Y. Huang, J. P. Xu, L. S. Wang, S. Y. Zhu. A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric. Microelectronics Reliability, 55(2):342-346, 2015. [doi]
@article{HuangXWZ15,
title = {A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric},
author = {Y. Huang and J. P. Xu and L. S. Wang and S. Y. Zhu},
year = {2015},
doi = {10.1016/j.microrel.2014.10.011},
url = {http://dx.doi.org/10.1016/j.microrel.2014.10.011},
researchr = {https://researchr.org/publication/HuangXWZ15},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {55},
number = {2},
pages = {342-346},
}