3D resistive RAM cell design for high-density storage class memory - a review

Boris Hudec, Chung-Wei Hsu, I-Ting Wang, Wei-Li Lai, Che-Chia Chang, Taifang Wang, Karol Fröhlich, Chia-Hua Ho, Chen-Hsi Lin, Tuo-Hung Hou. 3D resistive RAM cell design for high-density storage class memory - a review. Science in China Series F: Information Sciences, 59(6), 2016. [doi]

@article{HudecHWLCWFHLH16,
  title = {3D resistive RAM cell design for high-density storage class memory - a review},
  author = {Boris Hudec and Chung-Wei Hsu and I-Ting Wang and Wei-Li Lai and Che-Chia Chang and Taifang Wang and Karol Fröhlich and Chia-Hua Ho and Chen-Hsi Lin and Tuo-Hung Hou},
  year = {2016},
  doi = {10.1007/s11432-016-5566-0},
  url = {http://dx.doi.org/10.1007/s11432-016-5566-0},
  researchr = {https://researchr.org/publication/HudecHWLCWFHLH16},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {59},
  number = {6},
}