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13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

Hwang Huh, Wanik Cho, Jinhaeng Lee, Yujong Noh, Yongsoon Park, Sunghwa Ok, Jongwoo Kim, Kayoung Cho, Hyunchul Lee, Geonu Kim, Kangwoo Park, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Chankeun Kwon, Hanna Cho, Chanhui Jeong, Yujin Yang, Jayoon Goo, Jangwon Park, Juhyeong Lee, Heonki Kirr, Kangwook Jo, Cheoljoong Park, Hyeonsu Nam, HyunSeok Song, Sangkyu Lee, Woopyo Jeong, Kun-Ok Ahn, Tae-Sung Jung. 13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 220-221, IEEE, 2020. [doi]

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