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Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications

S. C. Hung, S. C. Chen, P. S. Chien, Y. S. Cho, Y. H. Lee, W. S. Hung. Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-6, IEEE, 2021. [doi]

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