Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect - researchr publication authors

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H. J. Hung, J. B. Kuo, D. Chen, C.-S. Yeh. Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect. Microelectronics Reliability, 50(5):607-609, 2010. [doi]

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