H. J. Hung, J. B. Kuo, D. Chen, C.-S. Yeh. Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect. Microelectronics Reliability, 50(5):607-609, 2010. [doi]
@article{HungKCY10,
title = {Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect},
author = {H. J. Hung and J. B. Kuo and D. Chen and C.-S. Yeh},
year = {2010},
doi = {10.1016/j.microrel.2010.01.015},
url = {http://dx.doi.org/10.1016/j.microrel.2010.01.015},
tags = {C++},
researchr = {https://researchr.org/publication/HungKCY10},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {50},
number = {5},
pages = {607-609},
}