Researchr is a web site for finding, collecting, sharing, and reviewing scientific publications, for researchers by researchers.
Sign up for an account to create a profile with publication list, tag and review your related work, and share bibliographies with your co-authors.
H. J. Hung, J. B. Kuo, D. Chen, C.-S. Yeh. Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect. Microelectronics Reliability, 50(5):607-609, 2010. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Parasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS deviceD. H. Lung, S. K. Hu, J. B. Kuo, D. Chen, Y. J. Chen. isicir 2014: 412-415 [doi]
The following publications are possibly variants of this publication: