Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii. Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 1, IEEE, 2018. [doi]
Abstract is missing.