Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy

K. Iizuka, K. Mori, T. Suzuki. Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy. Microelectronics Journal, 34(5-8):611-613, 2003. [doi]

Abstract

Abstract is missing.