Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors - researchr publication authors

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Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max C. Lemme, Tibor Grasser. Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 172-175, IEEE, 2015. [doi]

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