Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max C. Lemme, Tibor Grasser. Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 172-175, IEEE, 2015. [doi]
@inproceedings{IllarionovWSVOL15,
title = {Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors},
author = {Yury Illarionov and Michael Waltl and Anderson D. Smith and Sam Vaziri and Mikael Östling and Max C. Lemme and Tibor Grasser},
year = {2015},
doi = {10.1109/ESSDERC.2015.7324741},
url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324741},
researchr = {https://researchr.org/publication/IllarionovWSVOL15},
cites = {0},
citedby = {0},
pages = {172-175},
booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7135-3},
}