Reliability aspects of gate oxide under ESD pulse stress - researchr publication authors

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Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix. Reliability aspects of gate oxide under ESD pulse stress. Microelectronics Reliability, 49(12):1407-1416, 2009. [doi]

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