Reliability aspects of gate oxide under ESD pulse stress

Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix. Reliability aspects of gate oxide under ESD pulse stress. Microelectronics Reliability, 49(12):1407-1416, 2009. [doi]

Abstract

Abstract is missing.