Jae-Woo Im, Woo-Pyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok Min Yoon, Wook-Ghee Hahn, Jin-Ho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-Hoon Jang, Sang Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi. 7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]
@inproceedings{ImJKNSCYKKPKPYH15,
title = {7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate},
author = {Jae-Woo Im and Woo-Pyo Jeong and Doo-Hyun Kim and Sangwan Nam and Dong-Kyo Shim and Myung-Hoon Choi and Hyun-Jun Yoon and Dae-Han Kim and Youse Kim and Hyun Wook Park and Dong-Hun Kwak and Sang-Won Park and Seok Min Yoon and Wook-Ghee Hahn and Jin-Ho Ryu and Sang-Won Shim and Kyung-Tae Kang and Sung Ho Choi and Jeong-Don Ihm and Young-Sun Min and In-Mo Kim and Doosub Lee and Ji-Ho Cho and Ohsuk Kwon and Ji-Sang Lee and Moosung Kim and Sang-Hyun Joo and Jae-Hoon Jang and Sang Won Hwang and Dae-Seok Byeon and Hyang-Ja Yang and Ki Tae Park and Kyehyun Kyung and Jeong-Hyuk Choi},
year = {2015},
doi = {10.1109/ISSCC.2015.7062960},
url = {http://dx.doi.org/10.1109/ISSCC.2015.7062960},
researchr = {https://researchr.org/publication/ImJKNSCYKKPKPYH15},
cites = {0},
citedby = {0},
pages = {1-3},
booktitle = {2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015},
publisher = {IEEE},
isbn = {978-1-4799-6224-2},
}