7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

Jae-Woo Im, Woo-Pyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok Min Yoon, Wook-Ghee Hahn, Jin-Ho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-Hoon Jang, Sang Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi. 7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]

Abstract

Abstract is missing.