Takashi Inose, Seiichi Aritome, Ryutaro Yasuhara, Satoshi Mishima, Ken Takeuchi. Study of error repeatability and recovery in 40nm TaOx ReRAM. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 10-13, IEEE, 2017. [doi]
Abstract is missing.