High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs

Dimitris P. Ioannou, Adam W. DiVergilio. High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024. pages 270-273, IEEE, 2024. [doi]

Abstract

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