Table of Contents

• High-Efficiency High-Conversion-Ratio Power Delivery Circuits for Computing ApplicationsHoi Lee, Chen Chen, Weijie Han, Athul M. Sudha, Navaneeth Sri Easwaran, Jin Liu. 1-4 [doi]
• Characterization of ScAlN/GaN Toward Electronic Device ApplicationTakuya Maeda, Yusuke Wakamoto, Atsushi Kobayashi. 1-4 [doi]
• Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOSSamuel James Bader, Ahmad Zubair, Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif, Dimitri Frolov, Kaushik Narayanan, Jag Rangaswamy, Puneet Kanwar Kaur, Sanjeev Kumar, Nirmal Kundu, Shreyas Samraksh Jayaprakash, Abhijeet Khobragade, Yashwanth Pathivada, Qiang Yu, Jagannathan Vasudevan, Ibukun Momson, Said Rami, Heli Vora, Marko Radosavljevic, Pratik Koirala, Michael Beumer, Andrey Vyatskikh, Paul Nordeen, Thomas Hoff, Nachiket V. Desai, Han Wui Then. 5-8 [doi]
• Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier LayersIvan Berdalovic, Dario Novakovic, Tomislav Suligoj. 9-12 [doi]
• A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom ApplicationsPascal Chevalier 0002, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger. 13-17 [doi]
• High-Performance SiGe Heterojunction Phototransistor in a Commercial SiGe BiCMOS Platform for Free-Space Optical ReceiversMozhgan Hosseinzadeh, Milad Frounchi, George N. Tzintzarov, Jeffrey W. Teng, John D. Cressler. 18-21 [doi]
• Practical Simulation and Test Strategies for Advanced Heterojunction Bipolar TransistorsAdam W. DiVergilio. 22-25 [doi]
• Towards 500GHz fMAX 140nm SiGe BiCMOS Technology for 5G/6G ApplicationsJ. P. John, J. Kirchgessner, J. J. T. M. Donkers, Peter H. C. Magnée, P. G. M. Sebel, R. Werkman, G. Anderson, Ihor Brunets, P. K. Uttwani, Mohamed G. Moinuddin, L. Radic, I. To, T. H. Both. 26-29 [doi]
• A Family of Physics-Based Models for Monolithic GaN IntegrationLan Wei, Ryan Fang, Yijing Feng, Johan Alant, Daiyao Xu, Tanya Rampal, Ujwal Radhakrishna. 30-37 [doi]
• A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based MethodologyRafael Perez Martinez, Masaya Iwamoto, Ana M. Banzer Morgado, Yiao Li, Roberto Tinti, Jianjun Xu, Chad Gillease, Steven Cochran, Bhawani Shankar, Else-Marie Schmidt, Zijian Song, Natalie Wagner, Philipp Pahl, Alexander Petr, Srabanti Chowdhury. 38-41 [doi]
• Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization ModelYasin Yüce, Sayed Ali Albahrani, Dirk Schwantuschke, Maxime Moulin, Arnulf Leuther. 42-45 [doi]
• Physics-Based Compact Model for GaN-Based Non-linear Transmission Line ResistorsJohan Alant, Ryan Fang, Yuxuan Zhang, Pilsoon Choi, Yijing Feng, Jessica Chong, Zev Pogrebin, Bin Lu, Ujwal Radhakrishna, Lan Wei. 46-49 [doi]
• A Direct Digital Synthesizer-Based Arbitrary Waveform Generator for Envelope Modulation in Trapped-Ion Quantum Computer Operating at 4KPaul Shine Eugine, Peter Toth, Kaoru Yamashita, Sebastian Halama, Christian Ospelkaus, Hiroki Ishikuro, Vadim Issakov. 50-53 [doi]
• A Low-Power, High-Swing LDMOS Driver Amplifier for Shuttling Controller in a Trapped-Ion Quantum Computer Operating at 4 KZhaoqun Guo, Alexander Meyer, Adilet Dossanov, Paul Julius Ritter, Marius Neumann, Jens Repp, Matthias Brandl, Meinhard Schilling, Vadim Issakov. 54-57 [doi]
• A Single-Stage 24 Gb/s 8: 1 Cryogenic Multiplexer for Josephson Arbitrary Waveform SynthesizerYerzhan Kudabay, Paul Julius Ritter, Vadim Issakov. 58-61 [doi]
• ASM-GaN Model for Resistive Mixer Applications at D-Band FrequenciesCristina Maurette-Blasini, Dirk Schwantuschke, Sayed Ali Albahrani, Peter Brückner, Konstantin Kuliabin, Sébastien Chartier, Rüdiger Quay. 62-65 [doi]
• Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMTAntony Abel Kunnath, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther. 66-69 [doi]
• Practical Dimensions of Contemporary GaN ModelingLarry Dunleavy, Jiang Liu, Hugo Morales. 70-75 [doi]
• Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHzRob D. Jones, Jerome Cheron, Benjamin F. Jamroz, Ari D. Feldman, Peter H. Aaen. 76-79 [doi]
• Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-GateAntony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther. 80-83 [doi]
• High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTsFilippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, G. Bonomo, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi. 84-87 [doi]
• An Overview of SiC High-Voltage Power Devices and High-Temperature ICsTsunenobu Kimoto, M. Kaneko, Keita Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, N. Maeda. 88-94 [doi]
• 802 Gbps Coherent Optical Sub-Assembly (COSA) based on a Coupling Modulated Silicon Ring ResonatorX. Chen, A. Mistry, A. El Sayed, C. Williams, Lorenzo Iotti, A. Atef, Kishore Padmaraju, M. Malinowski, D. Che, Rafid A. Sukkar, Rick Younce, Alexandre Horth, Yury Dziashko, H. Guan, R. Shi, D. Gill, A. Seyoum, C. Marsh, M. Schmidt, G. Burrell, J. Basak, D. Chapman, A. Mikami, Alexander V. Rylyakov, A. Leven, Nicolas A. F. Jaeger. 95-98 [doi]
• A 64Gb/s Si-Photonic Micro-Ring Resonator Transceiver with Co-designed CMOS Driver and TIA for WDM Optical-IOQianli Ma, Sikai Chen, Jintao Xue, Yingjie Ma, Yuean Gu, Chao Cheng, Yihan Chen, Haoran Yin, Guike Li, Zhao Zhang 0004, Nanjian Wu, Ke Li, Lei Wang 0187, Ming Li, Chao Xiang, Binhao Wang, Nan Qi, Liyuan Liu. 99-102 [doi]
• Broadband Linear Drivers for 800G/1.6T Energy Efficient Optical LinksMir H. Mahmud, Hasan Al-Rubaye, Gabriel M. Rebeiz. 103-106 [doi]
• Integrated Photonics in Thin-Film Lithium NiobateChristian Reimer. 107-110 [doi]
• A compact low-loss Ku-Band 90° Hybrid Coupler for Front-End Modules in 45 nm SOI CMOSEvgenii Fedorov, Vadim Issakov. 111-114 [doi]
• A Ku-Band SiGe: C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAEChristian Bredendiek, Jan Wessel, Klaus Aufinger, Nils Pohl. 115-118 [doi]
• III-V Semiconductors in Commercial Communication Satellite PayloadsJim Sowers. 119-125 [doi]
• 140-GHz Transmit and Receive Front-end Circuits with 10.8-dBm Psat and 5.9-dB NF in a 45-nm BiCMOS SOI ProcessWonho Lee, Everett O'Malley, James F. Buckwalter. 126-129 [doi]
• A 130-GHz Bandwidth 61-dBOhm Variable-Gain Differential Linear TIA in a 130-nm SiGe: C BiCMOS TechnologyThiemo Herbel, Mohsin Tarar, Frank Vater, Dietmar Kissinger. 130-133 [doi]
• Design of a Terahertz InP HBT Quadrupler and Silicon InterposerVinay Iyer, Christopher M. Moore, Prerana Singaraju, Matthew F. Bauwens, Steven M. Bowers, Robert M. Weikle. 134-137 [doi]
• Ka-Band MMIC Implementation of a Load-Modulating Loop Combiner Power AmplifierOsian Jones, Taylor Barton. 138-141 [doi]
• The Design of Wideband LNAs in 45nm SiGe BiCMOSDavid Dolt, Mingi Yeo, David Reents, Will Gouty, Tony Quach, Samuel Palermo. 142-145 [doi]
• A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOSV. Lasserre, S. Koop-Brinkmann, M. Caruso, D. Dal Maistro, G. Volpato, Q. H. Le, Thomas Kämpfe, C. Ziegler, Finn Stapelfeldt, Vadim Issakov. 146-149 [doi]
• A 7.7-mW DC-to-62 GHz Ultra-Wideband Low-Noise Amplifier with ±2.1 ps Group Delay Variation and 3.3 dB NF in 0.13-μm SiGe: C BiCMOSEren Vardarli, Austin Ying-Kuang Chen, Michael Schröter. 150-153 [doi]
• A Biasing Scheme for the Gain Compression Point Optimization of HBT Cascode D-Band LNAsLorenzo Serra, Guglielmo De Filippi, Lorenzo Piotto, Andrea Mazzanti. 154-157 [doi]
• A Low-Noise Amplifier in 130-nm InP HBT with 15.5 dB Gain and Record 5.3 dB Noise-Figure at 212 GHzAmirreza Alizadeh, Kwangwon Park, Saleh Hassanzadehyamchi, Utku Soylu, Miguel E. Urtega, Mark J. W. Rodwell. 158-161 [doi]
• 300-GHz 160-Gb/s InP-HEMT Wireless Front-End With Fully Differential ArchitectureHiroshi Hamada, Ibrahim Abdo, Takuya Tsutsumi, Hiroyuki Takahashi. 162-165 [doi]
• 300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array TransmitterTeruo Jyo, Ibrahim Abdo, Hiroshi Hamada, Munehiko Nagatani, Adam Pander, Hitoshi Wakita, Miwa Mutoh, Yuta Shiratori, Daisuke Kitayama, Carrel da Gomez, Chun Wang, Kota Hatano, Chenxin Liu, Ashbir Aviat Fadila, Jian Pang, Atsushi Shirane, Kenichi Okada, Hiroyuki Takahashi. 166-172 [doi]
• A Q-band Phased-Array Transmit Beamformer in 45 nm CMOS SOI for SATCOMTiantong Ren, Yuan Chang, Brian A. Floyd. 173-176 [doi]
• Full Antenna in Package Solution for 100GHz 6G infrastructure, in 140nm SiGe BiCMOS TechnologyPeter H. C. Magnée, R. Mandamparambil, P. Mattheijssen, Mustafa Acar, K. Giannakidis, X. Yang, Z. Chen, P. Freidl, J. J. T. M. Donkers, P. G. M. Sebel, Ihor Brunets, J. W. Bergman, Domine Leenaerts, A. Ghannam, Stig Danielsson, G. Bisht, M. Lal, W. C. Liao, O. Tageman. 177-180 [doi]
• 10-GSymbols/s Supply Modulated 250-GHz SiGe HBT Transmitter RF Front-End with 6.8-dBm Peak Modulated PowerHaidong Guo, Suprovo Ghosh, Frank Zhang, Suhwan Lee, Wooyeol Choi 0001, Shenggang Dong, O. Kenneth. 181-184 [doi]
• A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT TechnologyArno Hemelhof, Sehoon Park, Yang Zhang 0081, Mark Ingels, Giuseppe Gramegna, Kristof Vaesen, Dongyang Yan, Piet Wambacq. 185-188 [doi]
• A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT ProcessEythan Lam, Jeff Shieh-Chieh Chien, Petra Rowell, Miguel Urteaga, James F. Buckwalter. 189-192 [doi]
• Trends in Millimeter-Wave and THz Test EquipmentEric W. Bryerton, Jeffrey L. Hesler. 193-198 [doi]
• A D-band SiGe Subharmonic Downconverter with Dynamic Conversion Gain and Fixed Input CompressionJonathan Tao, James F. Buckwalter. 199-202 [doi]
• A Sub-Sampling 35GHz PLL in 45nm PDSOI BiCMOS with 37fs Integrated Jitter and a FoM of -252dBChristopher Chen, Yan Zhang 0050, Hao-Yu Chien, Jiazhang Song, Jia Zhou, Chao-Jen Tien, Sudhakar Pamarti, Chih-Kong Ken Yang, Mau-Chung Frank Chang. 203-206 [doi]
• N-Path Mixers Beyond CMOSAlysoha Molnar. 207-212 [doi]
• W-band GaN Resistive FET I-Q Mixer MMICs with Low Conversion LossDaniel Kuzmenko, Harris Moyer, Jana Georgieva, Tai Haw, Stephen A. Maas. 213-216 [doi]
• A 10 Gb/s, 120 GHz Compact and Energy-Efficient Harmonic-OOK Modulator using 90 nm SiGe BiCMOSShah Zaib Aslam, Najme Ebrahimi. 217-220 [doi]
• A 132-204 GHz Carrier Storage Frequency Divider with sub-50 Micro-Watt DC PowerSidharth Thomas, Benyamin Fallahi Motlagh, Aydin Babakhani. 221-224 [doi]
• A Novel Approach to Zero Ω Transmission Line Analysis and Design at W-Band and BeyondIsrael Tapia, Eren Vardarli, Ciro Esposito, Michael Schröter. 225-228 [doi]
• D-Band meets FinFET: Fully-Integrated Transmitter and Receiver Architectures for 100+Gb/s LinksSteven Callender, Abhishek Agrawal, Amy Whitcombe, Stefano Pellerano. 229-236 [doi]
• Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT?Ankita Ankita, Mihilat Manahile, Shih-Chun Tsu, Ali Ebadi Yekta, Terry Alford, Stephen M. Goodnick, Robert J. Nemanich, Trevor J. Thornton. 237-242 [doi]
• Advances in GaN HEMT and GaN Power Amplifier Techniques for Base-StationsBernhard Grote, David Yu-Ting Wu, Bruce Green, Raphael Holin, David Burdeaux, Philippe Renaud, Humayun Kabir, Patrick Hu. 243-249 [doi]
• Ka-Band, Reactively Matched Non-Uniform Distributed Power Amplifier MMICs in GaN-on-SiCMichael Litchfield, Qin Shen-Schultz, Bernard Schmanski. 250-253 [doi]
• Load-Modulated Balanced Amplifiers for Next-G Wireless CommunicationsPingzhu Gong, Jiachen Guo, Kenle Chen. 254-257 [doi]
• A 19.1-dBm-Linear 2-20 GHz N-path Down-converter in HRL 40-nm GaN for Resilient ReceiversRobin Ying, Joe Tai. 258-261 [doi]
• Design of an Ultra-Low Phase Noise Broadband Amplifier in 130 nm SiGe BiCMOS TechnologyVijayalakshmi Surendranath Shroff, Meysam Bahmanian, Stephan Kruse, Johann-Christoph Scheytt. 262-265 [doi]
• Single-Chip 30 GHz SiGe Sub-Sampling PLL with 28.3 fs JitterDimitre Dimitrov, Mark D. Hickle, Matthew Speir, Joseph M. Krzyzek, Daniel P. Lacroix, Shail Srinivas, Robert Sepanek, Spencer Desrochers, Steven Eugene Turner. 266-269 [doi]
• High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTsDimitris P. Ioannou, Adam W. DiVergilio. 270-273 [doi]
• On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic TemperaturesXiaodi Jin, Prateek Kumar, Michael Schröter. 274-277 [doi]
• TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian OptimizationJustin P. Heimerl, Jeffrey W. Teng, Harrison P. Lee, Delgermaa Nergui, Jackson P. Moody, John D. Cressler. 278-281 [doi]
• The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor's (HCBT) Beta Recovery at Cryogenic TemperaturesFilip Bogdanovic, Lovro Markovic, Azra Tabakovic, Josip Zilak, Marko Koricic, Tomislav Suligoj. 282-285 [doi]
• Using Pulsed-Mode Measurements of SiGe HBTs for Non-Destructive, Improved RF-SOA EstimationNelson Sepúlveda-Ramos, Harrison P. Lee, Jeffrey W. Teng, John D. Cressler. 286-289 [doi]
• On the Safe Operating Area of InP HBTsMarkus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter. 290-293 [doi]
• TCAD for Circuits and Systems: Process Emulation, Parasitics Extraction, Self-HeatingZlatan Stanojevic, Xaver Klemenschits, Gerhard Rzepa, Ferdinand Mitterbauer, Christian Schleich, Franz Schanovsky, Oskar Baumgartner, Markus Karner. 294-297 [doi]
• SiGe and CMOS Technologies for Wireless PA ApplicationsRandy Wolf, Vibhor Jain, Sameer Jain, Shafi Syed, Chi Zhang, Abdellatif Bellaouar, Arul Balasubramaniyan, Sujata Ghosh, Rebouh Benelbar, Liyou Lu. 298-305 [doi]