Sandra Irobi, Zaid Al-Ars, Said Hamdioui. Bit line coupling memory tests for single-cell fails in SRAMs. In 28th IEEE VLSI Test Symposium, VTS 2010, April 19-22, 2010, Santa Cruz, California, USA. pages 27-32, IEEE Computer Society, 2010. [doi]
@inproceedings{IrobiAH10,
title = {Bit line coupling memory tests for single-cell fails in SRAMs},
author = {Sandra Irobi and Zaid Al-Ars and Said Hamdioui},
year = {2010},
doi = {10.1109/VTS.2010.5469624},
url = {http://dx.doi.org/10.1109/VTS.2010.5469624},
tags = {testing},
researchr = {https://researchr.org/publication/IrobiAH10},
cites = {0},
citedby = {0},
pages = {27-32},
booktitle = {28th IEEE VLSI Test Symposium, VTS 2010, April 19-22, 2010, Santa Cruz, California, USA},
publisher = {IEEE Computer Society},
isbn = {978-1-4244-6648-1},
}