18.8 A Fully-Generic-Process Galvanic Isolator for Gate Driver with 123mW 23% Power Transfer and Full-Triplex 21/14/0.5Mb/s Bidirectional Communication Utilizing Reference-Free Dual-Modulation FSK

Hiroaki Ishihara, Kohei Onizuka. 18.8 A Fully-Generic-Process Galvanic Isolator for Gate Driver with 123mW 23% Power Transfer and Full-Triplex 21/14/0.5Mb/s Bidirectional Communication Utilizing Reference-Free Dual-Modulation FSK. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 300-302, IEEE, 2020. [doi]

Abstract

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