Yuichiro Ishii, Hidehiro Fujiwara, Shinji Tanaka, Yasumasa Tsukamoto, Koji Nii, Yuji Kihara, K. Yanagisawa. A 28 nm Dual-Port SRAM Macro With Screening Circuitry Against Write-Read Disturb Failure Issues. J. Solid-State Circuits, 46(11):2535-2544, 2011. [doi]
@article{IshiiFTTNKY11,
title = {A 28 nm Dual-Port SRAM Macro With Screening Circuitry Against Write-Read Disturb Failure Issues},
author = {Yuichiro Ishii and Hidehiro Fujiwara and Shinji Tanaka and Yasumasa Tsukamoto and Koji Nii and Yuji Kihara and K. Yanagisawa},
year = {2011},
doi = {10.1109/JSSC.2011.2164021},
url = {http://dx.doi.org/10.1109/JSSC.2011.2164021},
researchr = {https://researchr.org/publication/IshiiFTTNKY11},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {46},
number = {11},
pages = {2535-2544},
}