A 28 nm Dual-Port SRAM Macro With Screening Circuitry Against Write-Read Disturb Failure Issues - researchr publication

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Yuichiro Ishii, Hidehiro Fujiwara, Shinji Tanaka, Yasumasa Tsukamoto, Koji Nii, Yuji Kihara, K. Yanagisawa. A 28 nm Dual-Port SRAM Macro With Screening Circuitry Against Write-Read Disturb Failure Issues. J. Solid-State Circuits, 46(11):2535-2544, 2011. [doi]

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