Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto, Yuta Yoshida, Ken Shibata, Toshiaki Sano, Shinji Tanaka, Koji Nii. 2 28-nm pseudo 2-read/write dual-port SRAM using double pumping circuitry. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016. pages 17-20, IEEE, 2016. [doi]
@inproceedings{IshiiYSMTYSSTN16,
title = {2 28-nm pseudo 2-read/write dual-port SRAM using double pumping circuitry},
author = {Yuichiro Ishii and Makoto Yabuuchi and Yohei Sawada and Masao Morimoto and Yasumasa Tsukamoto and Yuta Yoshida and Ken Shibata and Toshiaki Sano and Shinji Tanaka and Koji Nii},
year = {2016},
doi = {10.1109/ASSCC.2016.7844124},
url = {http://dx.doi.org/10.1109/ASSCC.2016.7844124},
researchr = {https://researchr.org/publication/IshiiYSMTYSSTN16},
cites = {0},
citedby = {0},
pages = {17-20},
booktitle = {IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016},
publisher = {IEEE},
isbn = {978-1-5090-3700-1},
}