Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

N. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez. Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectronics Reliability, 45(9-11):1611-1616, 2005. [doi]

Authors

N. Ismail

This author has not been identified. Look up 'N. Ismail' in Google

N. Malbert

This author has not been identified. Look up 'N. Malbert' in Google

N. Labat

This author has not been identified. Look up 'N. Labat' in Google

A. Touboul

This author has not been identified. Look up 'A. Touboul' in Google

J. L. Muraro

This author has not been identified. Look up 'J. L. Muraro' in Google

F. Brasseau

This author has not been identified. Look up 'F. Brasseau' in Google

D. Langrez

This author has not been identified. Look up 'D. Langrez' in Google