Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit

Thomas Jacquet, Grazia Sasso, Anjan Chakravorty, N. Rinaldi, Klaus Aufinger, Thomas Zimmer, Vincenzo d'Alessandro, Cristell Maneux. Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit. Microelectronics Reliability, 55(9-10):1433-1437, 2015. [doi]

@article{JacquetSCRAZdM15,
  title = {Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit},
  author = {Thomas Jacquet and Grazia Sasso and Anjan Chakravorty and N. Rinaldi and Klaus Aufinger and Thomas Zimmer and Vincenzo d'Alessandro and Cristell Maneux},
  year = {2015},
  doi = {10.1016/j.microrel.2015.06.092},
  url = {http://dx.doi.org/10.1016/j.microrel.2015.06.092},
  researchr = {https://researchr.org/publication/JacquetSCRAZdM15},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {55},
  number = {9-10},
  pages = {1433-1437},
}